On the calculation of Schottky contact resistivity

نویسنده

  • Yang Liu
چکیده

This numerical study examines the importance of self-consistently accounting for transport and electrostatics in the calculaiton of semiconductor/metal Schottky contact resistivity. It is shown that ignoring such self-consistency results in significant under-estimation of the contact resistivity. An explicit numerical method has also been proposed to efficiently improve contact resistivity calculations.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors

In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from highresistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the...

متن کامل

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer leng...

متن کامل

Conductive and Stable Magnesium Oxide Electron-Selective Contacts for Efficient Silicon Solar Cells

DOI: 10.1002/aenm.201601863 level of recombination suppression at the rear surface. When Al is directly deposited on n-type c-Si, however, and even if it is not alloyed with the silicon, the contact behaves in a rectifying fashion and is associated with a high contact resistance, despite the small difference (≈0.1–0.2 eV) that exists between the Al work function and the electron affinity of sil...

متن کامل

Green growth of CdSe nanostructures for application in Schottky type solar cell

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

متن کامل

Green growth of CdSe nanostructures for application in Schottky type solar cell

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008